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| Philips Semiconductors Product specification Thyristors BT151 series GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 12 100 800R 800 7.5 12 100 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 109 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/s -40 MAX. -500R -650R -800R 5001 6501 800 7.5 12 100 110 50 50 2 5 5 5 0.5 150 125 UNIT V A A A A A2s A/s A V V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. June 1999 1 Rev 1.300 Philips Semiconductors Product specification Thyristors BT151 series THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 1.3 UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 0.25 TYP. 2 10 7 1.4 0.6 0.4 0.1 MAX. 15 40 20 1.75 1.5 0.5 UNIT mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; Gate open circuit RGK = 100 ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/s; dVD/dt = 50 V/s; RGK = 100 MIN. TYP. MAX. UNIT tgt tq 50 200 - 130 1000 2 70 - V/s V/s s s June 1999 2 Rev 1.300 Philips Semiconductors Product specification Thyristors BT151 series 15 Ptot / W conduction angle degrees 30 60 90 120 180 form factor Tmb(max) / C a 4 2.8 2.2 1.9 1.57 105.5 120 100 ITSM / A IT ITSM a = 1.57 2.2 2.8 4 118.5 1.9 112 10 80 60 40 20 time T Tj initial = 25 C max 5 0 0 1 2 3 4 5 IT(AV) / A 6 7 125 8 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). ITSM / A Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 25 IT(RMS) / A 20 dI T /dt limit 100 15 10 IT T I TSM time 5 Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 109C. VGT(Tj) VGT(25 C) 15 IT(RMS) / A BT151 1.6 109 C 1.4 1.2 1 10 5 0.8 0.6 0 -50 0 50 Tmb / C 100 150 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. June 1999 3 Rev 1.300 Philips Semiconductors Product specification Thyristors BT151 series 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) 30 25 IT / A Tj = 125 C Tj = 25 C Vo = 1.06 V Rs = 0.0304 ohms 20 15 10 5 0 typ max 0 -50 0 50 Tj / C 100 150 0 0.5 1 VT / V 1.5 2 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 BT145 10 Zth j-mb (K/W) 1 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 10000 3 2.5 1000 2 RGK = 100 Ohms 1.5 1 0.5 0 -50 10 100 gate open circuit 0 50 Tj / C 100 150 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. June 1999 4 Rev 1.300 Philips Semiconductors Product specification Thyristors BT151 series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1999 5 Rev 1.300 Philips Semiconductors Product specification Thyristors BT151 series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1999 6 Rev 1.300 |
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